MACOM PTV Hoja de datos

No.	parte #	Fabricante	Descripción
1	PTVA120251EA	MACOM	25W High Power RF LDMOS FET include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE
2	PTVA120501EA	MACOM	50W High Power RF LDMOS FET include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Effici
3	PTVA082407NF	MACOM	Thermally-Enhanced High Power RF LDMOS FET a single ended design and input matching that allow for use from 746 MHz to 821 MHz. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-4-2 Peak/Average