| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
MA-COM |
The RF MOSFET |
|
|
|
|
MACOM |
The RF Line NPN Silicon Power Transistor https://www.macom.com/support MRF455 The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V Rev. V1 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained he |
|
|
|
|
MA-COM |
The RF Line NPN Silicon Power Transistor |
|
|
|
|
MA-COM |
The RF Line NPN Silicon Power Transistor |
|
|
|
|
MA-COM |
RF Power FET Enhanced thermal performance Higher power dissipation Guaranteed Performance at 30 MHz, 50 V: Output Power — 150 W Gain — 18 dB (22 dB Typ) Efficiency — 40% Typical Performance at 175 MHz, 50 V: Output Power — 150 W Gain — 13 dB Low T |
|
|
|
|
MACOM |
Linear RF Power FET • Superior High Order IMD IMD(d3) (30 W PEP): -35 dB IMD(d11) (30 W PEP): -60 dB • Specified 50 V, 30 MHz Characteristics: Output Power: 30 W Gain: 18 dB Efficiency: 40% • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Lower Rever |
|
|
|
|
MA-COM |
The RF Line NPN Silicon High-Frequency Transistor |
|
|
|
|
MA-COM |
The RF Line NPN Silicon Power Transistor |
|
|
|
|
M/A-COM Technology |
Microwave Pulse Power Silicon NPN Transistor x: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tes |
|
|
|
|
MA-COM |
RF Power FET rmation. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affil |
|
|
|
|
MA-COM |
The RF MOSFET |
|
|
|
|
MA-COM |
The RF MOSFET |
|
|
|
|
MA-COM |
The RF MOSFET |
|
|
|
|
MA-COM |
RF Power FET soever. MACOM assumes no responsibility for errors or omissions in these materials. MACOM may make changes to specifications and product descriptions at any time, without notice. MACOM makes no commitment to update the information and shall have no r |
|
|
|
|
MA-COM |
The RF Line NPN Silicon Power Transistor in. Typ. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 50 — Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 100 — Collector-Base Breakdown Voltage (IC = 100 mAdc, |
|
|
|
|
MACOM |
Microwave Power Silicon NPN Transistor Guaranteed performance @ 960-1215MHz, 36Vdc Output power: 30W peak Minimum gain: 9.0dB min., 9.5dB typ. 100% tested for load mismatch at all phase angles with 10:1 VSWR Hermetically sealed, industry standard package Silicon nitride passiv |
|
Desde 2024. D4U Semiconductor.
|