MA-COM MDS Hoja de datos

No.	parte #	Fabricante	Descripción
1	MDS-222	MA-COM	Surface Mount Double-Balanced Mixer  Fully Hermetic Package  Three Decade Coverage  Impedance: 50 Ohms Nominal  Maximum Input Power: 400 mW Max, Derated to 85°C @ 3.2 mW/°C  X Port Current: 50 mA Max.  MIL-STD-883 Screening Available SF-1 Rev. V4 Description Transformers conve
2	MDS-148	MA-COM	Double-Balanced Mixer n Fully Hermetic Package n 1 dB Compression Point: +5 dBm n Conversion Loss: 6 dB Typical Midband n LO-RF/LO-IF Isolation: 40 dB Typical Midband n Impedance: 50 Ohms Nominal n Maximum Input Power: 300 mW Max, Derated to 85°C @ 3.2 mW/°C n X Port Curr
3	MDS-149	MA-COM	Double-Balanced Mixer  Over Two-Decade Frequency Range  Conversion Loss: 6 dB Typical Midband  LO-RFIsolation: 40 dB Typical Midband  Fully Hermetic Package  Impedance: 50 Ohms Nominal  Maximum Input Power: 300 mW Max, Derated to 85°C @ 3.2 mW/°C  IF Port Current:
4	MDS-189	MA-COM	High Level Termination Insensitive Mixer  Operates Over Full PCN/PCS/PHS/MSS Bands  Low Conversion Loss  Fully Hermetic Package  Intermodulation Ratio Insensitive to System Mismatches  VSWR: <2.0:1 Typical Midband  Isolation: 35 dB Typical Midband  High IIP3 (+28 dBm Typical 1-3500 M
5	MDS-223	MA-COM	Surface Mount Double-Balanced Mixer  Fully Hermetic Package  Low Cost  Conversion Loss: 7 dB Typical Midband  Impedance: 50 Ohms Nominal  Maximum Input Power: 400 mW Max, Derated to 85°C @ 3.2 mW/°C  X Port Current: 50 mA Max.  MIL-STD-883 Screening Available Description Transfo
6	MDS9651	MagnaChip	Complementary N-P Channel Trench MOSFET N-Channel VDS = 30V ID = 6.9A @ VGS = 10V RDS(ON) <28mΩ @ VGS = 10V <42mΩ @ VGS = 4.5V P-Channel VDS = -30V ID = -6.0A @ VGS = -10V RDS(ON) <35mΩ @ VGS = -10V <55mΩ @ VGS = -4.5V Applications Inverters General purpose applications 5(D2) 6(D2) 7(D1)