MA-COM A10 Hoja de datos

No.	parte #	Fabricante	Descripción
1	A1021	MA-COM	Cascadable Amplifier Product Image Rev. V3 Description The A1021 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays
2	A101	MA-COM	Cascadable Amplifier • HIGH OUTPUT POWER: +23 dBm (TYP.) • HIGH THIRD ORDER IP: +36 dBm (TYP.) • HIGH SECOND ORDER IP: +64 dBm (TYP.) • LOW NOISE FIGURE: 3 dB (TYP.) Description The A101 RF amplifier is a discrete hybrid design, which uses thin film manufacturing process
3	UMA1015M	NXP	Low-power dual frequency synthesizer for radio communications • Two fully programmable RF dividers up to 1.1 GHz • Fully programmable reference divider up to 35 MHz • 2 : 1 or 1 : 1 ratio of selectable reference frequencies • Fast three-line serial bus interface • Adjustable phase comparator gain • Programmable
4	FDMA1032CZ	Fairchild Semiconductor	Complementary PowerTrench MOSFET an independent N-Channel & P-Channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package
5	CA100	Omega	COMPACT CAL MANUAL Do not operate the instrument if there is a defect in protective grounding or fuses. Before commencing operation, always make sure that the protection feature is fault-free. External Connection After making sure that grounding is properly carried out
6	A1031	MA-COM	Cascadable Amplifier  HIGH EFFICIENCY: 36 mA at +5 Vdc  LOW NOISE FIGURE: 2.7 dB (TYP.)  HIGH GAIN, TWO STAGES: 28.5 dB (TYP.)  MED OUTPUT POWER: +10 dBm (TYP.) Description The A1031RF amplifier is a discrete hybrid design, which uses thin film manufacturing processe
7	NPA1007	MA-COM	GaN on Silicon Power Amplifier  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturated Applications  Broadband Operation from 20 - 2500 MHz  28 V Operation  12.5 dB Gain @ 2500 MHz  43% Drain Efficiency @ 2500 MHz  100% RF Tested  Fully Matched at Input, Unmatche
8	UMA1015AM	NXP	Low-power dual frequency synthesizer for radio communications • Two fully programmable RF dividers up to 1.1 GHz • Fully programmable reference divider up to 35 MHz • 2 : 1 or 1 : 1 ratio of selectable reference frequencies • Fast three-line serial bus interface • Adjustable phase comparator gain • Programmable
9	SMA1031	MA-COM	Cascadable Amplifier  HIGH EFFICIENCY: 36 mA at +5 Vdc  LOW NOISE FIGURE: 2.7 dB (TYP.)  HIGH GAIN, TWO STAGES: 28.5 dB (TYP.)  MED OUTPUT POWER: +10 dBm (TYP.) Description The A1031RF amplifier is a discrete hybrid design, which uses thin film manufacturing processe
10	SMA1021	MA-COM	Cascadable Amplifier Product Image Rev. V3 Description The A1021 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 2 stage bipolar transistor feedback amplifier design displays
11	SMA10A	Compact Technology	Transient Voltage Suppressors Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC MECHANICAL DATA Case : JEDEC SMA molded plastic Polarity : Color band den
12	SMA10CA	Compact Technology	Transient Voltage Suppressors Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC MECHANICAL DATA Case : JEDEC SMA molded plastic Polarity : Color band den
13	SMA100A	Compact Technology	Transient Voltage Suppressors Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC MECHANICAL DATA Case : JEDEC SMA molded plastic Polarity : Color band den
14	SMA100CA	Compact Technology	Transient Voltage Suppressors Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time Component in accordance to RoHS 2002/95/EC MECHANICAL DATA Case : JEDEC SMA molded plastic Polarity : Color band den
15	SMA101	MA-COM	Cascadable Amplifier • HIGH OUTPUT POWER: +23 dBm (TYP.) • HIGH THIRD ORDER IP: +36 dBm (TYP.) • HIGH SECOND ORDER IP: +64 dBm (TYP.) • LOW NOISE FIGURE: 3 dB (TYP.) Description The A101 RF amplifier is a discrete hybrid design, which uses thin film manufacturing process
16	CD1A100	MA-COM	Schottky Barrier Rectifier Chip  1 Amp Schottky Barrier Rectifier Chips  Silicon Dioxide Passivated  Compatible With All Wire Bonding and Die Attach Techniques (with the exception of solder reflow) Description The silicon Schottky barrier rectifier chip series offers a large rev
17	UMA1014	NXP	Low-power frequency synthesizer for mobile radio communications • Single chip synthesizer; compatible with Philips cellular radio chipset • Fully programmable RF divider • I2C interface for two-line serial bus • On-chip crystal oscillator/TCXO buffer from 3 to 16 MHz • 16 reference division ratios allowing 5 to 1
18	UMA1016AT	NXP	Frequency synthesizer for radio communication equipment • RF input frequencies to 1 GHz • Fully programmable RF divider • 3-wire serial bus interface • On-chip 3 to 16 MHz crystal oscillator • Mask programmable ÷2 to ÷31 reference divider ratio • Up to 1 MHz channel spacing • Crystal frequency buffered ou
19	UMA1016BT	NXP	Frequency synthesizer for radio communication equipment • RF input frequencies to 1 GHz • Fully programmable RF divider • 3-wire serial bus interface • On-chip 3 to 16 MHz crystal oscillator • Mask programmable ÷2 to ÷31 reference divider ratio • Up to 1 MHz channel spacing • Crystal frequency buffered ou