| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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M/A-Com |
Double Balanced Mixer n n n n RH-3 Low Cost Conversion Loss: 7 dB Typical Impedance: 50 Ohms Nominal Maximum Input Power: 400 mW max. @ 25°C, Derated to 85°C @ 3.2 mW/°C n IF Port Current: 50 mA Max. n MIL-STD-883 Screening Available Description Transformers convert th |
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M/A-Com |
(MD124 / MD140) Double Balanced Mixers |
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Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
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M/A-Com |
Broadband Double Balanced Mixer |
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MOTOROLA |
(MD1120 - MD1122) COMPLEMENTARY DUAL GENERAL PURPOSE TRANSISTOR |
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M/A-Com |
(MD124 / MD140) Double Balanced Mixers |
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Micron |
industrial and commercial process and control systems Compact size, high efficiency and DIN Rail mounting 100-240VAC wide-range auto-selection input Overcurrent, shortcircuit, and overvoltage protection DC OK LED Indicator w/remote indicator contact Adjustable DC output voltage Power boost f |
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Micron |
industrial and commercial process and control systems Compact size, high efficiency and DIN Rail mounting 100-240VAC wide-range auto-selection input Overcurrent, shortcircuit, and overvoltage protection DC OK LED Indicator w/remote indicator contact Adjustable DC output voltage Power boost f |
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Micron |
industrial and commercial process and control systems Compact size, high efficiency and DIN Rail mounting 100-240VAC wide-range auto-selection input Overcurrent, shortcircuit, and overvoltage protection DC OK LED Indicator w/remote indicator contact Adjustable DC output voltage Power boost f |
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Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
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Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
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Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
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Sharp Electrionic Components |
Photothyristor Coupler 1. High RMS ON-state current ( IT : MAX. 200mA rms ) 2. High repetitive peak OFF-state voltage ( VDRM : MIN. 400V ) 3. Trigger current I FT : MAX. 15mA at R G = 20kΩ 4. For half-wave control • • • S12MD1V For full-wave control • • • S12MD3 5. Recognized |
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Sharp Electrionic Components |
Photothyristor Coupler 1. High RMS ON-state current ( IT : MAX. 200mA rms ) 2. High repetitive peak OFF-state voltage ( VDRM : MIN. 400V ) 3. Trigger current I FT : MAX. 15mA at R G = 20kΩ 4. For half-wave control • • • S12MD1V For full-wave control • • • S12MD3 5. Recognized |
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Sharp Electrionic Components |
High Speed/ High Sensitivity Type Phototriac Coupler High Speed, High Sensitivity Type Phototriac Coupler s Outline Dimensions diagram 6 S21MD10T 4 6.5± 0.5 6 4 Zero cross circuit 1 2 3 ( Unit : mm ) Internal connection 1. High sensitivity ( IFT : MAX. 5mA ) 2. High speed ( Turn-on time : MAX. 20 µ |
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Sharp Electrionic Components |
Photothyristor Coupler 1. High repetitive peak OFF-state voltage ( VDRM : MIN. 600V ) 2. Low trigger current ( IFT : MAX. 10mA at R G = 20kΩ ) 3. High isolation voltage between input and output S22MD1V • • • V iso : 5 000V rms S22MD3V • • • V iso : 2 500V rms g S22MD1V and S22 |
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IMP |
Compact/ Bidirectional/ Eight Line Monolithic TVS Diode Network • • • • Protects eight I/O lines Monolithic IC for higher reliability at lower cost Manufactured using Proprietary technology Transient protection for data lines to IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 1000-4-4 (EFT) 40A (tp = 5/50ns) IEC |
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IMP |
Compact/ Bidirectional/ Eight Line Monolithic TVS Diode Network • • • • Protects eight I/O lines Monolithic IC for higher reliability at lower cost Manufactured using Proprietary technology Transient protection for data lines to IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 1000-4-4 (EFT) 40A (tp = 5/50ns) IEC |
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Central Semiconductor Corp |
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS MBOL TEST CONDITIONS MIN ICER VCE=54V, RBE=2.2kΩ (PMD18K, 19K80) ICER VCE=67V, RBE=2.2kΩ (PMD18K, 19K100) IEBO VEB=5.0V BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K80) 80 BVCER IC=100mA, RBE=2.2kΩ (PMD18K, 19K100) 100 BVCEO IC=100mA (PMD18K, 19K8 |
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MOTOROLA |
(MD1120 - MD1122) COMPLEMENTARY DUAL GENERAL PURPOSE TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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