No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Littelfuse |
Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH |
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Littelfuse |
Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH |
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Littelfuse |
Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH |
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Littelfuse |
Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH |
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Littelfuse |
Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH |
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Littelfuse |
Thyristors • Surge capability > 10 A • Blocking voltage (VDRM / VRRM) capability up to 800 V • High dv/dt noise immunity • Improved turn-off time (tq) < 25 µsec • Sensitive gate for direct microprocessor interface • Through-hole and surface-mount packages • RoH |
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