Leshan Radio Company MSD Hoja de datos

No.	parte #	Fabricante	Descripción
1	S-LMSD103BT1G	Leshan Radio Company	SCHOTTKY BARRIER SWITCHING DIODE · Low Forward Voltage Drop · Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time · Low Reverse Capacitance · Also Available in Lead Free Version · S- Prefix for Automotive and Other Applications Requiring Unique Site a
2	S-LMSD103AT1G	Leshan Radio Company	SCHOTTKY BARRIER SWITCHING DIODE · Low Forward Voltage Drop · Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time · Low Reverse Capacitance · Also Available in Lead Free Version · S- Prefix for Automotive and Other Applications Requiring Unique Site a
3	S-LMSD103CT1G	Leshan Radio Company	SCHOTTKY BARRIER SWITCHING DIODE · Low Forward Voltage Drop · Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time · Low Reverse Capacitance · Also Available in Lead Free Version · S- Prefix for Automotive and Other Applications Requiring Unique Site a
4	MSD1010T1	Leshan Radio Company	Low Saturation Voltage
5	MSD601-RT1	Leshan Radio Company	(MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount CE = 10 Vdc, I B = 0) DC Current Gain (1) (V CE = 10 Vdc, I C = 2.0 mAdc) MSD601-RT1 MSD601-ST1 (V CE = 2.0 Vdc, I C = 100 mAdc) Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. Max
6	MSD601-ST1	Leshan Radio Company	(MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount CE = 10 Vdc, I B = 0) DC Current Gain (1) (V CE = 10 Vdc, I C = 2.0 mAdc) MSD601-RT1 MSD601-ST1 (V CE = 2.0 Vdc, I C = 100 mAdc) Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. Max
7	MSD602-RT1	Leshan Radio Company	NPN General Purpose Amplifier Transistor Surface Mount rent Gain (1) (V CE = 10 Vdc, I C = 150 mAdc) (V CE = 10 Vdc, I C = 500 mAdc) Collector-Emitter Saturation Voltage (I C = 300 mAdc, I B = 30 mAdc) Output Capacitance(VCB=10Vdc,IE=0,f=1.0MHz) 1. Pulse Test: Pulse Width < 300 µs, D.C < 2%. Vdc pF DEV
8	LMSD103BT1G	Leshan Radio Company	SCHOTTKY BARRIER SWITCHING DIODE · Low Forward Voltage Drop · Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time · Low Reverse Capacitance · Also Available in Lead Free Version · S- Prefix for Automotive and Other Applications Requiring Unique Site a
9	LMSD103AT1G	Leshan Radio Company	SCHOTTKY BARRIER SWITCHING DIODE · Low Forward Voltage Drop · Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time · Low Reverse Capacitance · Also Available in Lead Free Version · S- Prefix for Automotive and Other Applications Requiring Unique Site a
10	LMSD103CT1G	Leshan Radio Company	SCHOTTKY BARRIER SWITCHING DIODE · Low Forward Voltage Drop · Guard Ring Construction for Transient Protection · Negligible Reverse Recovery Time · Low Reverse Capacitance · Also Available in Lead Free Version · S- Prefix for Automotive and Other Applications Requiring Unique Site a