Leshan Radio Company BCW Hoja de datos

No.	parte #	Fabricante	Descripción
1	BCW29LT1	Leshan Radio Company	General Purpose Transistors
2	BCW30LT1	Leshan Radio Company	General Purpose Transistors
3	BCW33LT1	Leshan Radio Company	General Purpose Transistors(NPN Silicon)
4	LBCW69LT1G	Leshan Radio Company	General Purpose Transistors PNP Silicon OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 ) Collector –Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 ) Emitter –Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current (VCE = –20 Vdc, I E =
5	LBCW68GLT1G	Leshan Radio Company	General Purpose Transistors (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 ) Collector –Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 ) Emitter –Base Breakdown Voltage
6	BCW61DLT1	Leshan Radio Company	General Purpose Transistors(PNP Silicon)
7	BCW65ALT1	Leshan Radio Company	General Purpose Transistors(NPN Silicon)
8	BCW68GLT1	Leshan Radio Company	PNP Transistor
9	BCW70LT1	Leshan Radio Company	General Purpose Transistors
10	BCW73LT1	Leshan Radio Company	General Purpose Transistors(NPN Silicon)
11	BCWALT1	Leshan Radio Company	General Purpose Transistors(NPN Silicon)
12	BCWBLT1	Leshan Radio Company	General Purpose Transistors(NPN Silicon)
13	BCWDLT1	Leshan Radio Company	General Purpose Transistors(NPN Silicon)
14	LBCW70LT1G	Leshan Radio Company	General Purpose Transistors PNP Silicon OFF CHARACTERISTICS Collector –Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 ) Collector –Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 ) Emitter –Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current (VCE = –20 Vdc, I E =