| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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LZG |
N-CHANNEL MOSFET Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 600 V ID(Tc=25℃) 2.0 A ID(Tc=100℃) 1.3 A IDM 6.0 A VGSS ±30 V EAS 120 mJ EAR 5.4 mJ IAR 2.0 A PD(Tc=25℃) 54 W TJ,TSTG -55 |
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LZG |
N-CHANNEL MOSFET Low gate charge ,low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 2.0 1.3 6.0 ±30 120 5.4 2.0 23 -55 to 150 V A A A V mJ mJ A W ℃ /Electric |
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Desde 2024. D4U Semiconductor.
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