LZG 3DA Hoja de datos

No.	parte #	Fabricante	Descripción
1	3DA5027	LZG	SILICON NPN TRANSISTOR High voltage, small collector output capacitance. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC Tj Tstg 300 300 7.0 100 50 1.3 150 -55～150 V V V mA mA W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test c
2	3DA4382	LZG	SILICON NPN TRANSISTOR High breakdown voltage, excellent current characteristics. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC(Tc=25℃) Tj Tstg 200 200 6.0 2.0 1.0 25 150 -55～150 V V V A A W ℃ ℃ /Electrical characteristics(Ta=25℃)
3	3DA1360	LZG	SILICON PNP TRANSISTOR High fT, large PC . /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 2SC1360 2SC1360A 2SC1360 2SC1360A 50 60 V 45 60 V 4.0 V IC 50 mA PC 1.0 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symb
4	3DA1573	LZG	SILICON NPN TRANSISTOR
5	3DA1573A	LZG	SILICON NPN TRANSISTOR
6	3DA450	LZG	SILICON NPN TRANSISTOR High PC and IC. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 60 V VCEO 45 V VEBO 5.0 V IC 1.0 A ICM 2.0 A PC 1.0 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO I
7	3DA1360A	LZG	SILICON PNP TRANSISTOR High fT, large PC . /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 2SC1360 2SC1360A 2SC1360 2SC1360A 50 60 V 45 60 V 4.0 V IC 50 mA PC 1.0 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symb