| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
LZG |
SILICON PNP TRANSISTOR High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC Tj Tstg -300 -300 -5.0 -100 -200 1.0 150 -55～150 V V V mA mA |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR Low VCE(sat),excellent DC current gain characteristics, complements the 2SD2118(3DG2118). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -6.0 V IC -5 A ICM -10 A PC 1.0 W *PC (Tc=25℃) 10 W Tj 150 ℃ |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR Complementary pair with 2SC1383(3DA1383). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -1.0 A ICP -1.5 A PC 1.0 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symb |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR High fT, complementary pair with 2SC5171(3DA5171). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC(Ta=25℃) PC(Tc=25℃) Tj Tstg -180 -180 -5.0 -2.0 -1.0 2.0 20 150 -55～150 V V V A A W W ℃ ℃ /Electrical characterist |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC Tj Tstg -200 -200 -5.0 -100 -200 1.0 150 -55～150 V V V mA mA |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR Low VCE(sat),complements the 2SD1760(3DA1760). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC PC (Tc=25℃) Tj Tstg -60 -50 -5.0 -3.0 1.0 15 150 -55～150 V V V A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR Low VCE(sat),complementary pair with 2SD1762(3DA1762). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -50 V VEBO -5.0 V IC -3.0 A ICP -4.5 A PC 2.0 W PC(TC=25℃) 25 W Tj 150 ℃ Tstg -55～150 ℃ /Electrica |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR Low collector saturation voltage, collector power dissipation, complementary to 2SD880(3DD880) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -7.0 V IC -3.0 A IB -0.5 A PC(Ta=25℃) 1.5 W PC(TC= |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR High transition frequency, complementary to 2SC4793(3DA4793). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -230 V VCEO -230 V VEBO -5.0 V IC -1.0 A IB -0.1 A PC(Ta=25℃) 2.0 W PC(Tc=25℃) 20 W Tj 150 ℃ Tstg |
|
|
|
|
LZG |
SILICON PNP TRANSISTOR High VCEO, small ICBO and VCE(sat). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -180 V VCEO -160 V VEBO -6.0 V IC -1.5 A PC(Ta=25℃) 1.5 W PC(Tc=25℃) 25 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta= |
|
Desde 2024. D4U Semiconductor.
|