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LZG |
SILICON PNP TRANSISTOR Complementary pair with 2SD467(3DG467). /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -25 V VCEO -20 V VEBO -5.0 V IC -0.7 A ICM -1.0 A PC 0.5 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol |
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LZG |
SILICON PNP TRANSISTOR |
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LZG |
SILICON PNP TRANSISTOR Complementary pair with 2SD601A(3DG601A). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -45 V VCEO -45 V VEBO -7.0 V IC -100 mA ICP -200 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) S |
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LZG |
SILICON PNP TRANSISTOR High breakdown,low VCE(sat),complements the 2SD1782K(3DG1782K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -80 V VCEO -80 V VEBO -5 V IC -500 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) |
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LZG |
SILICON PNP TRANSISTOR Low saturation voltage, excellent hFE linearity and high hFE. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -40 V VCEO -30 V VEBO -5 V IC -3 A ICP -7 A PC 0.35 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics |
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LZG |
SILICON PNP TRANSISTOR Low VCE(sat),complements the 2SD1760(3DA1760). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC PC PC (Tc=25℃) Tj Tstg -60 -50 -5.0 -3.0 1.0 15 150 -55～150 V V V A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol |
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LZG |
SILICON PNP TRANSISTOR High VCEO, large PC. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -200 V VCEO -150 V VEBO -6.0 V IC -2.0 A ICP -3.0 A PC(Ta=25℃) 2.0 W PC(Tc=25℃) 30 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta |
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LZG |
SILICON PNP TRANSISTOR Low VCE(sat),large current, complementary to 2SD2444K(3DG2444K). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -15 V VEBO -6.0 V IC -1.0 A ICM -3.0 A PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical chara |
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LZG |
SILICON PNP TRANSISTOR High VEBO,complementary pair with 2SD889(3DG889). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -8.0 V IC -100 mA ICP -200 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta= |
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LZG |
SILICON PNP TRANSISTOR Low saturation voltage. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -20 V VCEO -20 V VEBO -6.0 V IC -3.0 A PC 750 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE |
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LZG |
SILICON PNP TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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