| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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LRC |
TO-92 Plastic-Encapsulate Transistors Power dissipation PCM : 1 W ˄Tamb=25ć˅ Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJˈTstg: -55ć to +150ć ˄ ćELECTRICAL CHARACTERISTICS Tamb=25 unless üTO 92 1.EMITTER |
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LRC |
Silicon Tuning Diode BreakdownVoltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Symbol V(BR)R IR Min 20 — Typ — — Max — 50 Unit Vdc nAdc Ct, Diode Capacitance Q, Figure of Merit VR = 2.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc pF f = 500 MHz Device Min Nom Max |
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Desde 2024. D4U Semiconductor.
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