LINEAR SYSTEMS LSK Hoja de datos

No.	parte #	Fabricante	Descripción
1	LSK170B	LINEAR SYSTEMS	Single N-Channel JFET  ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz  High Breakdown Voltage: BVGSS = 40V min  High Gain: Gfs = 22mS (typ)  High Input Impedance: 20GΩ typ  Low Capacitance: 22pF max  Improved Second Source Replacement for 2SK170  For Equivalent Monolith
2	LSK170A	LINEAR SYSTEMS	Single N-Channel JFET  ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz  High Breakdown Voltage: BVGSS = 40V min  High Gain: Gfs = 22mS (typ)  High Input Impedance: 20GΩ typ  Low Capacitance: 22pF max  Improved Second Source Replacement for 2SK170  For Equivalent Monolith
3	LSK170C	LINEAR SYSTEMS	Single N-Channel JFET  ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz  High Breakdown Voltage: BVGSS = 40V min  High Gain: Gfs = 22mS (typ)  High Input Impedance: 20GΩ typ  Low Capacitance: 22pF max  Improved Second Source Replacement for 2SK170  For Equivalent Monolith
4	LSK170D	LINEAR SYSTEMS	Single N-Channel JFET  ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz  High Breakdown Voltage: BVGSS = 40V min  High Gain: Gfs = 22mS (typ)  High Input Impedance: 20GΩ typ  Low Capacitance: 22pF max  Improved Second Source Replacement for 2SK170  For Equivalent Monolith
5	LSK170	LINEAR SYSTEMS	Single N-Channel JFET  ULTRA LOW NOISE (f =1khz): en = 0.9nV/√Hz  High Breakdown Voltage: BVGSS = 40V min  High Gain: Gfs = 22mS (typ)  High Input Impedance: 20GΩ typ  Low Capacitance: 22pF max  Improved Second Source Replacement for 2SK170  For Equivalent Monolith