| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
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LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
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LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
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LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
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|
LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
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|
LGE |
Schottky Barrier Rectifier Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxx x wheeling,and polarity protection applications The plast |
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Desde 2024. D4U Semiconductor.
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