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LGE |
Schottky Barrier Diode Low reverse leakage—IR=200nA(Max.). Very Low Capacitance—1.0pF @20V. Extremely Low minority carrier lifetime. High reverse leakage—70V(min.) Dimensions in inches and (millimeters) Applications For high-efficiency UHF and VHF detector app |
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Desde 2024. D4U Semiconductor.
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