| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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LGE |
Schottky Barrier Rectifiers Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plasti |
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LGE |
Schottky Barrier Rectifiers Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plasti |
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|
LGE |
Schottky Barrier Rectifiers Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plasti |
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Desde 2024. D4U Semiconductor.
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