| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Knox Semiconductor Inc |
SILICON HYPERABRUPT TUNING DIODES |
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Knox Semiconductor Inc |
Surface Mount Varactor 2043 SERIES HYPERABRUPT TUNING DIODES ure (Tstg) 10 µAdc VR = 12 Volts Ta = 25°C 15 Volt Min 20 nAdc 250 mW 125°C -55° to +125°C -65° to +150°C ♦♦♦ Package Styles Requires adding a dash number to the part number SOT23 Single SOT23 Common Anode SOT23 Common Cathode SOD323 SOD523 (SC79 |
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Knox Semiconductor Inc |
SILICON HYPERABRUPT TUNING DIODES 07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance ♦♦♦ |
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Knox Semiconductor Inc |
SILICON HYPERABRUPT TUNING DIODES 07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance ♦♦♦ |
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Knox Semiconductor Inc |
Surface Mount 2042 / 2041 SERIES Varactor HYPERABRUPT TUNING DIODES 6, -07, -08, -09, -10 -01, -06, -07, -08, -09, -10 -01, -06, -07, -08, -09, -10 -01, -06, -07, -08, -09, -10 -01, -06, -07, -08, -09, -10 Reverse Breakdown Voltage (VBR) Max Reverse Leakage Current (IR) Device Dissipation (PD) Junction Temperature ( |
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Knox Semiconductor Inc |
Surface Mount 2042 / 2041 SERIES Varactor HYPERABRUPT TUNING DIODES 6, -07, -08, -09, -10 -01, -06, -07, -08, -09, -10 -01, -06, -07, -08, -09, -10 -01, -06, -07, -08, -09, -10 -01, -06, -07, -08, -09, -10 Reverse Breakdown Voltage (VBR) Max Reverse Leakage Current (IR) Device Dissipation (PD) Junction Temperature ( |
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Knox Semiconductor Inc |
Surface Mount Varactor 2043 SERIES HYPERABRUPT TUNING DIODES ure (Tstg) 10 µAdc VR = 12 Volts Ta = 25°C 15 Volt Min 20 nAdc 250 mW 125°C -55° to +125°C -65° to +150°C ♦♦♦ Package Styles Requires adding a dash number to the part number SOT23 Single SOT23 Common Anode SOT23 Common Cathode SOD323 SOD523 (SC79 |
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Knox Semiconductor Inc |
Surface Mount Varactor 2043 SERIES HYPERABRUPT TUNING DIODES ure (Tstg) 10 µAdc VR = 12 Volts Ta = 25°C 15 Volt Min 20 nAdc 250 mW 125°C -55° to +125°C -65° to +150°C ♦♦♦ Package Styles Requires adding a dash number to the part number SOT23 Single SOT23 Common Anode SOT23 Common Cathode SOD323 SOD523 (SC79 |
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Knox Semiconductor Inc |
Surface Mount Varactor 2043 SERIES HYPERABRUPT TUNING DIODES ure (Tstg) 10 µAdc VR = 12 Volts Ta = 25°C 15 Volt Min 20 nAdc 250 mW 125°C -55° to +125°C -65° to +150°C ♦♦♦ Package Styles Requires adding a dash number to the part number SOT23 Single SOT23 Common Anode SOT23 Common Cathode SOD323 SOD523 (SC79 |
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Knox Semiconductor Inc |
Surface Mount Varactor 2043 SERIES HYPERABRUPT TUNING DIODES ure (Tstg) 10 µAdc VR = 12 Volts Ta = 25°C 15 Volt Min 20 nAdc 250 mW 125°C -55° to +125°C -65° to +150°C ♦♦♦ Package Styles Requires adding a dash number to the part number SOT23 Single SOT23 Common Anode SOT23 Common Cathode SOD323 SOD523 (SC79 |
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Knox Semiconductor Inc |
PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES 5 to + 125° C -65 to + 150° C ±10% ♦♦♦ Package Styles Requires adding a dash suffix number to the part number SOT23 SINGLE SOT23 Common Anode TO-92 Two Terminal (TMV) CHIPS -08 -09 -15 -01 P.O. BOX 609 • ROCKPORT, MAINE 04856 • 207-236-6076 • FAX |
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Knox Semiconductor Inc |
PLASTIC SURFACE MOUNT GENERAL PURPOSE ABRUPT VARACTOR DIODES 5 to + 125° C -65 to + 150° C ±10% ♦♦♦ Package Styles Requires adding a dash suffix number to the part number SOT23 SINGLE SOT23 Common Anode TO-92 Two Terminal (TMV) CHIPS -08 -09 -15 -01 P.O. BOX 609 • ROCKPORT, MAINE 04856 • 207-236-6076 • FAX |
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Knox Semiconductor Inc |
Surface Mount 3022 / 3033 SERIES Varactor SUPER HYPERABRUPT TUNING DIODES FOR VCXOS -07, -08, -09, -10 Reverse Breakdown Voltage (VBR) Max Reverse Leakage Current (IR) Device Dissipation (PD) Operating Temperature (Topr) Storage Temperature (Tstg) 10 µAdc VR = 6 Volts Ta = 25°C 8 Volt Min 0.1 µAdc 250 mW -55° to +125°C -65° to +1 |
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Knox Semiconductor Inc |
Surface Mount 3022 / 3033 SERIES Varactor SUPER HYPERABRUPT TUNING DIODES FOR VCXOS -07, -08, -09, -10 Reverse Breakdown Voltage (VBR) Max Reverse Leakage Current (IR) Device Dissipation (PD) Operating Temperature (Topr) Storage Temperature (Tstg) 10 µAdc VR = 6 Volts Ta = 25°C 8 Volt Min 0.1 µAdc 250 mW -55° to +125°C -65° to +1 |
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Knox Semiconductor Inc |
SILICON HYPERABRUPT TUNING DIODES 07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance ♦♦♦ |
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Knox Semiconductor Inc |
SILICON HYPERABRUPT TUNING DIODES 07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance ♦♦♦ |
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Knox Semiconductor Inc |
SILICON HYPERABRUPT TUNING DIODES 07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance ♦♦♦ |
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Knox Semiconductor Inc |
SILICON HYPERABRUPT TUNING DIODES 07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance ♦♦♦ |
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Knox Semiconductor Inc |
SILICON HYPERABRUPT TUNING DIODES 07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance ♦♦♦ |
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Knox Semiconductor Inc |
SILICON HYPERABRUPT TUNING DIODES 07, -08, -09, -10, -15 Device Dissipation (PD) Ta = 25°C Junction Temperature (TJ) Reverse Breakdown Voltage (VBR) 10 µAdc Max Reverse Leakage Current (IR) Vr = 10 Vdc Operating Temperature (Topr) Storage Temperature (Tstg) Capacitance Tolerance ♦♦♦ |
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Desde 2024. D4U Semiconductor.
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