No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Kexin |
PIN Diodes ● Low Resistance 0.9Ω ● Low Capacitance 0.3pF ● Packages rated MSL1, 260℃ per JEDEC J-STD-020) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Diodes Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0. |
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Kexin |
PIN Diodes ● Low Resistance 0.9Ω ● Low Capacitance 0.3pF ● Packages rated MSL1, 260℃ per JEDEC J-STD-020) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Diodes Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0. |
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Kexin |
PIN Diodes ● Low Resistance 0.9Ω ● Low Capacitance 0.3pF ● Packages rated MSL1, 260℃ per JEDEC J-STD-020) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Diodes Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0. |
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Kexin |
PIN Diodes ● Low Resistance 0.9Ω ● Low Capacitance 0.3pF ● Packages rated MSL1, 260℃ per JEDEC J-STD-020) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Diodes Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0. |
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Guangdong Kexin Industrial |
N-Channel SMPS Power MOSFET Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness +0.2 8.7-0.2 +0.1 1.27-0.1 TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Reduced Miller Capacitance and Low Input Capacitance Improve |
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Kexin |
PIN Diodes ● Low Resistance 0.9Ω ● Low Capacitance 0.3pF ● Packages rated MSL1, 260℃ per JEDEC J-STD-020) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Diodes Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0. |
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Kexin |
PIN Diodes ● Low Resistance 0.9Ω ● Low Capacitance 0.3pF ● Packages rated MSL1, 260℃ per JEDEC J-STD-020) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Diodes Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0. |
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Kexin |
N-Channel SMPS Power MOSFET Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness Reduced rDS(ON) Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI +0.25.28 -0.2 +0.28.7 -0. |
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