| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Kexin |
Schottky Diodes ● For Surface Mount Applications ● Extremely Low Thermal Resistance ● Easy Pick And Place ● High Temp Soldering: 250°C for 10 Seconds At Terminals ● High Current Capability With Low Forward Voltage DO-214AB(SMC) 3.250 2.743 2 7.112 6.604 6.223 3. |
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Guangdong Kexin |
MOS Field Effect Transistor Low On-state resistance RDS(on)1 = 5.3mÙ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0. |
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Kexin |
N-Channel MOSFET ● VDS (V) = 16V ● ID = 100 mA (VGS = 1.5V) ● RDS(ON) ＜ 50Ω (VGS = 1.5V) ● RDS(ON) ＜ 15Ω (VGS = 2.5V) ● RDS(ON) ＜ 12Ω (VGS = 4V) Gate 21 +0.151.6 -0.15 Drain Body Diode 3 0.5 +0.1 -0.1 0.3±0.05 ■ Absolute Maximum Ratings Ta = 25℃ Source +0.05 |
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Guangdong Kexin Industrial |
MOS Field Effect Transistor Low on-resistance +0.2 9.70-0.2 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Low Ciss : Ciss = 3200 pF TYP. +0.15 0.50-0.15 RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 18A) 0.127 |
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Guangdong Kexin Industrial |
MOS Field Effect Transistor 4.5-V drive available Low on-state resistance +0.2 8.7-0.2 RDS(on)1 = 14 m Low gate charge MAX. (VGS = 10 V, ID = 20 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. (ID = 40 A, VDD = 24 V, VGS = 10 V) Built-in gate protecti |
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Kexin |
MOS Field Effect Transistor Low gate charge QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) +0.2 8.7-0.2 Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.55 MAX. (VGS = 10 V, ID = 5.0 A) +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 Surface mount pa |
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Kexin |
MOS Field Effect Transistor 34 A, 100 V. RDS(ON) = 32m RDS(ON) = 35m @ VGS = 10 V +0.2 9.70-0.2 Low gate charge (57 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.1 0.80-0.1 +0.15 0. |
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Kexin |
Silicon N-channel Power MOSFET High-speed switching Low ON resistance Ron + 0 .2 8 .7 -0 .2 No secondary breakdown Avalanche energy capability guaranteed +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 |
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Kexin |
N-Channel MOSFET 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate ∗ Gate +0.1 0.38-0.1 0-0.1 2.Emitter 2. Source Protection Diode 3. Drain 3.collector Source ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Symbol VDSS VGSS ID IDP*1 PD *2 Rth(ch-a) * Tc |
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Kexin |
MOSFET Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A) Gate voltage rating 30 V Low on-state resistance RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.8A) Avalanche capability ratings +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27- |
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Kexin |
Schottky Diodes ● For Surface Mount Applications ● Extremely Low Thermal Resistance ● Easy Pick And Place ● High Temp Soldering: 250°C for 10 Seconds At Terminals ● High Current Capability With Low Forward Voltage DO-214AB(SMC) 3.250 2.743 2 7.112 6.604 6.223 3. |
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Kexin |
Schottky Diodes ● For Surface Mount Applications ● Extremely Low Thermal Resistance ● Easy Pick And Place ● High Temp Soldering: 250°C for 10 Seconds At Terminals ● High Current Capability With Low Forward Voltage DO-214AB(SMC) 3.250 2.743 2 7.112 6.604 6.223 3. |
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Kexin |
Schottky Diodes ● For Surface Mount Applications ● Extremely Low Thermal Resistance ● Easy Pick And Place ● High Temp Soldering: 250°C for 10 Seconds At Terminals ● High Current Capability With Low Forward Voltage DO-214AB(SMC) 3.250 2.743 2 7.112 6.604 6.223 3. |
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Guangdong Kexin Industrial |
MOSFET High voltage: VDSS = 200 V Gate voltage rating: RDS(on) = 0.60 30 V +0.2 9.70-0.2 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 Low Ci |
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Guangdong Kexin Industrial |
MOSFET High voltage: VDSS = 200 V Gate voltage rating: 30 V +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Low on-state resistance +0.1 0.80-0.1 Low Ciss: Ciss = 390 pF TYP. Built-in gate protec |
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Guangdong Kexin Industrial |
Silicon N-channel Power MOSFET Avalanche energy capacity guaranteed: EAS Gate-source surrender voltage VGSS = High-speed switching: tf = 50 ns No secondary breakdown 20 mJ 30 V guaranteed + 0 .2 8 .7 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 |
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Guangdong Kexin Industrial |
MOSFET 4.5 V drive available Low on-state resistance RDS(on)1 = 18 mÙ MAX. (VGS = 10 V, ID = 18 A) + 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 |
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Guangdong Kexin Industrial |
MOSFET Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) Low on-state resistance RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 5.0 A) +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Avalanche capability ratings Surface mount package availabl |
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Guangdong Kexin Industrial |
MOSFET Gate voltage rating 30 V Low on-state resistance Low input capacitance Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V) Avalanche capability rated Built-in gate protection diode Surface mount device available +0.2 5.28-0.2 +0.1 1.27-0.1 0.1max +0.1 0.8 |
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Guangdong Kexin Industrial |
MOSFET Low on-state resistance +0.2 9.70-0.2 +0.1 0.80-0.1 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 5 V drive available +0.15 0.50-0.15 Low Ciss: Ciss = 1300 pF TYP. 0.127 max +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolu |
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Desde 2024. D4U Semiconductor.
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