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Kexin |
Complementary Power Trench MOSFET ● N-Channel：VDS=30V ID=6A ● RDS(ON) ＜ 40mΩ (VGS = 10V) ● RDS(ON) ＜ 60mΩ (VGS = 4.5V) ● P-Channel：VDS=-30V ID=-6A ● RDS(ON) ＜ 40mΩ (VGS =-10V) ● RDS(ON) ＜ 70mΩ (VGS =-4.5V) SOP-8 +0.040.21 -0.02 1.50 0.15 1 Source1 2 Gate1 3 Source2 4 Gate2 5 Dra |
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Kexin |
N-Channel MOSFET ● VDS (V) = 200V ● ID = 4A (VGS = 10V) ● RDS(ON) ＜ 80mΩ (VGS = 10V) ● RDS(ON) ＜ 90mΩ (VGS = 6V) ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish D +0.040.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Ga |
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Kexin |
P-Channel MOSFET ● VDS=-30V ● RDS(on)=0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.50 0.15 +0.040.21 -0.02 S G D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous |
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Desde 2024. D4U Semiconductor.
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