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Kexin |
Schottky barrier diode Small surface mounting type. (UMD3) Ultra low VF.(VF=0.45V Typ. at 0.7A) IF=0.7A guaranteed despite the size. A b so lu te M a xim u m R a tin g s T a = 2 5 P aram eter P eak reverse voltage D C reverse voltage D C forward current P eak forward sur |
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Kexin |
Schottky Barrier Diode Small mold type.(SMD3) Low IR. High reliability. Absolute Maxim um Ratings Ta = 25 P aram eter Reverse voltage (repetitive peak) DC reverse voltage Average rectified forward current * Forward current surge peak (60 Hz 1cyc) * Junction temperature Sto |
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Kexin |
Schottky Diodes ● Small surface mounting type ● Low Forward Voltage ● Low Reverse Current ● High Reliability 1 2 3 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Diod |
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Kexin |
Schottky barrier diode Small surface mounting type.(SMD3) Two diodes with common cathode for excellent installation efficiency. High reliability. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 A bsolute M axim um R atings T a = 25 Param e |
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Kexin |
Schottky Diode ● Small surface mounting type ● Low reverse current and low forward voltage ● High reliability +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Diodes Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0. |
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Kexin |
Schottky Barrier Diode Small surface mounting type Low VF. (VF=0.43V Typ. at 0.5A) High reliability. Silicon epitaxial planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Reverse voltage DC Reve |
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Kexin |
Schottky barrier diode Small frequency rectification type.(SMD3) Low IR.(IR = 1 A Typ.) High reliability. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 A bsolute M axim um R atings T a = 25 Param eter P eak reverse voltage D C reverse vo |
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Kexin |
Schottky barrier diode Small frequency rectification type.(SMD3) Low IR.(IR = 50 nA Typ) High reliability. 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 Param eter P e |
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Desde 2024. D4U Semiconductor.
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