Kexin KDB Hoja de datos

No.	parte #	Fabricante	Descripción
1	KDB2532	Kexin	N-Channel MOSFET rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A Qg(tot) = 82nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0
2	KDB2552	Kexin	N-Channel MOSFET rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A Qg(tot) = 39nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0
3	KDB2570	Kexin	N-Channel MOSFET 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V RDS(ON) = 90 m @ VGS = 6 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27
4	KDB2572	Kexin	N-Channel MOSFET rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.
5	KDB2670	Kexin	N-Channel MOSFET 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1
6	KDB3632	Kexin	N-Channel MOSFET rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -
7	KDB3652	Kexin	N-Channel MOSFET rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0
8	KDB3672	Kexin	N-Channel MOSFET rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1
9	KDB3682	Kexin	N-Channel MOSFET rDS(ON) =32m (Typ.), VGS = 10V, ID =32A Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0
10	KDB5690	Kexin	N-Channel MOSFET 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V RDS(ON) = 0.032 @ VGS = 6 V Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High
11	KDB6030L	Kexin	N-Channel MOSFET 52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V RDS(ON) = 0.020 @ VGS = 4.5 V Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed. +5 .2 8 0.2 -0.2 +8 .7 0.2 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +1 .2 7 0.1 -0.1
12	KDB7045L	Kexin	N-Channel MOSFET 100 A, 30 V. RDS(ON) = 0.0045 @ VGS = 10 V RDS(ON) = 0.006 @ VGS = 4.5 V Critical DC electrical parameters specified at elevated temperature Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor Hi
13	KDB4020P	Kexin	P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1
14	KDB15N50	Kexin	N-Channel SMPS Power MOSFET Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness Reduced rDS(ON) Reduced Miller Capacitance and Low Input Capacitance Improved Switching Speed with Low EMI +0.25.28 -0.2 +0.28.7 -0.