No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Kexin |
P-Channel Enhancement MOSFET ● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching. +0.12.4 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 - 0.1 +0.10.97 -0.1 +1.3 0.1 - 0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaet |
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Kexin |
N-Channel MOSFET ● VDS (V) = 100V ● ID = 1.6A (VGS = 10V) ● RDS(ON) < 220mΩ (VGS = 10V) ● RDS(ON) < 235mΩ (VGS = 4.5V) G1 S2 3D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.10.68 -0.1 +0.21.1 -0.1 +0.21.6 -0.1 0 |
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Kexin |
P-Channel MOSFET ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. ● Low profile(<1.1mm). ● Available in tape and reel. ● Fast switching. +2.4 0.1 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.38 0.1 -0.1 +0. |
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Kexin |
N-Channel MOSFET ● VDS (V) = 60V ● RDS(ON) < 92mΩ (VGS = 10V) ● RDS(ON) < 116mΩ (VGS = 4.5V) TraMnOsiSsFtoErsT N-Channel MOSFET IRLML0060 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0.1 +0 |
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