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Kexin |
N-Channel Trench Power MOSFET ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Volt |
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Desde 2024. D4U Semiconductor.
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