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Kexin |
NPN Transistor +0.1 2.4-0.1 Collector current :IC=0.2A Power dissipation :PC=0.15W +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base |
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Kexin |
Silicon NPN Epitaxial Transistor +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 High fT : fT=6.5GHz 0.55 Low Noise Figure: NF=2.3dB(Typ.) f=1GHz +0.1 1.3-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Rati |
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Kexin |
Silicon NPN Transistor High DC current gain. Low collector saturation voltage. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High power dissipation. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 |
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Kexin |
Silicon NPN Transistor Low collector saturation voltage. High speed switching time. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5. |
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Kexin |
NPN Silicon Transistor Excellent Switching Times +0.2 9.70 -0.2 tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A High colletor Breakdown Voltage: VCEO=400V +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5 |
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Kexin |
Silicon NPN Transistor 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base curre |
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Kexin |
Zener Diodes ● Very Sharp Reverse Characteristic ● Low Reverse Current Level ● Very High Stability ● Low Noise 0.079(2.0) MAX Diodes 1.0 2(26.0) MIN. 0.157 (4.0) MAX 0.024(0.60) MAX 1.0 2(26.0) MIN. Dimensions in inches and (millimeters) ■ Absolute Maximum |
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Kexin |
Silicon NPN Transistor Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) Excellent Switching Time :tstg=1.0ìs(Typ.) +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 |
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Kexin |
Silicon NPN Transistor 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction |
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Kexin |
2SC3052 Collector current :IC=0.2A Power dissipation :PC=0.15W NPN Transistor 2SC3052 Transistors SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 0.4 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Max |
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Kexin |
Zener Diode ƽ High reliability ƽ Voltage range 10V to 270V ƽ Fits onto 5 mm SMD footpads ƽ Wave and reflow solderable Glass passivated junction Zener Diode BZG03C Series TransDisiotodress DO-214AC(SMA) 2.126 1.397 2 4.597 3.988 2.896 2.22 1 2.489 2.02 Uni |
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Kexin |
Zener Diodes Silicon Planar Power Zener Diodes. For use as low voltage stabilizer or voltage reference. The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance available on request. Diodes available in th |
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Kexin |
(BZT52C2V0S - BZT52C39S) Surface Mount Zener Diodes Planar Die Construction Ultra-Small Surface Mount Package Ideally Suited for Automated Assembly Processes Absolute Maximum Ratings (Ta = 25 ) Parameter Power dissipation Thermal Resistance, Junction to Ambient Air Forward Voltage @ IF = 10mA R Symbo |
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Kexin |
ZENER DIODES ● Low zener impedance ● Low regulation factor ● Glass passivated junction ● High temperature soldering guaranteed: 260 ℃/10S at terminals Diodes ■ Absolute Maximum Ratings Ta = 25℃ Parameter Forward voltage @ IF=200mA Power Dissipation (Note.1) The |
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Kexin |
Surface Mount Zener Diodes Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Absolute Maximum Ratings (Ta = 25 ) Parameter Power dissipation Thermal Resistance, Junction to Ambient Air Forward Voltage @ IF = 10mA Jumction temperatu |
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Desde 2024. D4U Semiconductor.
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