No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Kexin |
Silicon Switching Diode Array Electrically insulated high-voltage medium-speed diodes Diodes Unit: mm A bsolute M axim um R atings T a = 25 Param eter R everse voltage P eak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power dissipa |
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Kexin |
High Voltage Double Diode Small plastic SMD package High switching speed: max. 50 ns High continuous reverse voltage: 300 V Electrically insulated diodes. 0.1max SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 0.1+0.05 -0.02 +0. |
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Kexin |
Quad Surface Mount Switching Diode Array Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 0.1+0.05 -0.02 +0.11.25 -0.1 0.1max +0 |
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Kexin |
Low-leakage double diode Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 s Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 |
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Kexin |
Silicon Switching Diode Array For high-speed switching Electrically insulated diodes Diodes Unit: mm A b s o lu te M a x im u m R a tin g s T a = 2 5 P aram eter R e ve rs e vo lta g e P e a k re ve rs e vo lta g e F orw ard current S urge forw ard current, t = 1 s T o ta l p |
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Kexin |
Switching Diode Absolute Maximum Ratings Ta = 25 Parameter Power dissipation (Ta mb=25 ) Forward Current Reverse Voltage Operating and storage junction temperature range SOT-523 1.6+0.1 -0.1 1.0+0.1 -0.1 0.2+0.05 -0.05 21 Unit: mm 0.1+0.01 -0.01 +0.151.6 - |
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Kexin |
Quad Surface Mount Switching Diode Array Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 0.1+0.05 -0.02 +0.11.25 -0.1 0.1max +0 |
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