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Kexin |
Schottky Barrier Rectifier ƽ Guard Ring Die Construction for Transient Protection ƽ Ideally Suited for Automatic Assembly ƽ Low Power Loss, High Efficiency ƽ Surge Overload Rating to 50A Peak ƽ For use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Prote |
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Kexin |
TVS Diodes ● Working Peak Reverse Voltage Range − 10 V to 78 V ● Standard Zener Breakdown Voltage Range − 11.7 V to 91.3 V ● Peak Power − 600 Watts @ 1 ms ● ESD Rating of Class 3 (> 16 KV) per Human Body Model ● Low Leakage < 5uA Above 10 V ● Maximum Clamp Volt |
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Kexin |
N-Channel MOSFET 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 |
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Kexin |
Schottky Diodes ● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● High forward surge current capability DO-214AC(SMA) 2.126 1.397 2 4.597 3.988 2.896 2.22 1 2.489 2.02 Unit: mm 4.32 4.12 5.668 4.925 2.438 1.981 2.75 2.55 |
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Kexin |
N-Channel MOSFET 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V Low gate charge (27 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 |
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Desde 2024. D4U Semiconductor.
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