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KIA |
N-CHANNEL MOSFET RDS(on)=0.17Ω @ VGS=10V Low gate charge ( typical 102nC) Fast switching capability Avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 5 Function Gate Drain Source Rev 1.0 JAN 2014 KIA SEMICONDUCTORS |
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KIA |
N-CHANNEL MOSFET RDS(on)=0.17Ω @ VGS=10V Low gate charge ( typical 102nC) Fast switching capability Avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 5 Function Gate Drain Source Rev 1.0 JAN 2014 KIA SEMICONDUCTORS |
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Desde 2024. D4U Semiconductor.
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