| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ion Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Collector Output Capacitance Cob TEST CONDITION IC=0.1mA IC=10mA IE=-1.0mA VCB=40V VEB=10V IC=100mA, VCE=2V I |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR =-0.1mA, IB=0 VCB=-30V, IE=0 VEB=-10V, IC=0 DC Current Gain MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE(1) IC=-10mA, VCE=-5V hFE(2) IC=-100mA, VCE=-5V Collector-Emitter Saturation Voltage Base Emitter Voltage MMBTA63/64 MMBTA63/64 VCE(sat) VBE Curr |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR =-0.1mA, IB=0 VCB=-30V, IE=0 VEB=-10V, IC=0 DC Current Gain MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE(1) IC=-10mA, VCE=-5V hFE(2) IC=-100mA, VCE=-5V Collector-Emitter Saturation Voltage Base Emitter Voltage MMBTA63/64 MMBTA63/64 VCE(sat) VBE Curr |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR High Breakdown Voltage. Collector Power Dissipation : PC=350mW. MMBTA44 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-BaseVoltage VCBO 450 Collector-EmitterVoltage VCEO 400 Emitter-Base Volt |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
EPITAXIAL PLANAR PNP TRANSISTOR Complementary to MMBTA42/43. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage MMBTA92 MMBTA93 VCBO -300 -200 Collector-Emitter Voltage MMBTA92 MMBTA93 VCEO -300 -200 Emitter-Base Voltage Collector Current Emitte |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR Complementary to MMBTA92/93. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage MMBTA42 MMBTA43 VCBO 300 200 Collector-Emitter Voltage MMBTA42 MMBTA43 VCEO 300 200 Emitter-Base Voltage Collector Current Emitter Cu |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR itter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Current Gain Bandwith Product fT *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% TEST CONDITION IC=0.1mA VCB=30V VEB=10V IC=10mA, VCE=5V IC=100mA, VCE=5V IC=100mA, IB=0.1mA IC=100mA, |
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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR Complementary to MMBTA55. Driver Stage Application of 20 to 25 Watts Amplifiers. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 60 Emitter-Base Voltage VEBO 6 Collector |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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KEC |
SILICON EPITAXIAL PLANAR DIODE Small Package : SOT-23. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Power Dissipation PD* 300 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note PD* : Package Mounted on 99.5% alumina 10 8 0.6mm. UNIT mW Ma |
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Desde 2024. D4U Semiconductor.
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