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KEC |
EPITAXIAL PLANAR NPN TRANSISTOR ication R : 18~27, O : 23~35 VCB=700, IE=0 VEB=9V, IC=0 IC=10mA, IE=0 IE=1mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=1MHz 2014. 2. 07 Revision No : 3 MIN. - 800 10 18 8 |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A High Collector Voltage : VCBO=700V. MJE13009 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Excellent Switching Times : ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A High Collector Voltage : VCBO=700V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Excellent Switching Times : ton=1.6 S(Max.), tf=0.7 S(Max.), at IC=5A High Collector Voltage : VCBO=700V. MJE13007F TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VC |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR 4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=1MHz VCE=10V, IC=0.5A Storage Time tstg Fall Time Diode Forward Voltage tf VF *Reverse recovery tims (di/dt=10A/ S) trr *Pulse Test : Pulse Width = 5mS, Duty cycles 10% IF=2A IF=0.4A IF=1A IF |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Excellent Switching Times : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A High Collector Voltage : VCBO=900V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR CHARACTERISTIC SYMBOL Emitter Cut-off Current DC Current Gain IEBO hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency Turn-On Time Storage Time Fall Ti |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MJE13005F TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage E |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Excellent Switching Times : ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A High Collector Voltage : VCBO=700V. MJE13005 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Em |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Excellent Switching Times : ton=1.6 S(Max.), tf=0.7 S(Max.), at IC=5A High Collector Voltage : VCBO=700V. MJE13007 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VCB |
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KEC |
TRIPLE DIFFUSED NPN TRANSISTOR Excellent Switching Times : tstg=2.5 S(Max.), tf=0.3 S(Max.), at IC=2.5A High Collector Voltage : VCBO=1050V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pul |
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Desde 2024. D4U Semiconductor.
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