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KEC |
KMB050N60PA VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=18m (Max.) @VGS = 10V D I K M L P F G H J H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 |
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KEC |
N-Channel Trench MOSFET VDSS=40V, ID=35A. Low Drain to Source On-state Resistance. : RDS(ON)=12.0m (Max.) @ VGS=10V : RDS(ON)=17.0m (Max.) @ VGS=4.5V A CD B H G FF J E 123 O K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ |
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KEC |
N-Channel MOSFET VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=0.022 @VGS = 10V Qg(typ.) = 32nC Improved dv/dt capacity, high Ruggedness Maximum Junction Temperature Range (175 ) KMB050N60P N CHANNEL MOS FIELD EFFECT TRANSISTOR A E I K M D NN F G B Q L |
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KEC |
N-Channel Trench MOSFET VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 |
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KEC |
Dual N-Channel MOSFET VDSS=40V, ID=7A. Drain to Source on Resistance. RDS(ON)=25m (Max.) @VGS=10V RDS(ON)=45m (Max.) @VGS=4.5V Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Curre |
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KEC |
P-Channel MOSFET VDSS=-30V, ID=-8A. Drain to Source On Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=35m (Max.) @ VGS=-4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage |
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KEC |
Dual N-Channel MOSFET VDSS=35V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V Super High Dense Cell Design Very fast switching KMB6D0DN35QB Dual N-Ch Trench MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTI |
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KEC |
Dual N-Channel MOSFET VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V Super High Dense Cell Design High Power and Current Handing Capability MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING |
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KEC |
Dual N-Channel MOSFET VDSS=60V, ID=4.5A. Drain-Source ON Resistance. RDS(ON)=56m (Max.) @ VGS=10V RDS(ON)=77m (Max.) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Source Voltage Drain Cur |
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KEC |
N-Channel MOSFET VDSS=40V, ID=3.5A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=10V RDS(ON)=62m (Max.) @ VGS=4.5V Super High Dense Cell Design KMB3D5N40SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D |
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KEC |
Trench MOSFET A H 2 G 1 3 VDSS=-30V, ID=-3A Drain-Source ON Resistance RDS(ON)=80m (Max.) @ VGS=-10V RDS(ON)=140m (Max.) @ VGS=-4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/ |
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KEC |
Trench MOSFET VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m RDS(ON)=42m (Max.) @VGS=10V (Max.) @VGS=4.5V B1 B2 1 4 8 5 A Super High Dense Cell Design High Power and Current Handing Capability DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.9 |
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KEC |
Trench MOSFET N-Channel : VDSS=30V, ID=7A. : RDS(ON)=23.5m (Max.) @ VGS=10V : RDS(ON)=39m (Max.) @ VGS=4.5V P-Channel : VDSS=-30V, ID=-5A. : RDS(ON)=45.5m (Max.) @ VGS=-10V : RDS(ON)=80m (Max.) @ VGS=-4.5V Super High Dense Cell Design. Reliable and rugged. 1 4 B1 |
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KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=18m (Max.) @VGS = 10V D I K M L P F G H J H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 |
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KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS= 75V, ID= 80A Drain-Source ON Resistance : RDS(ON)=12m (Max.) @VGS = 10V MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulsed (Note 1) D |
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KEC |
P-Channel Trench MOSFET VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain Source Voltage |
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KEC |
N-Channel Trench MOSFET VDSS=30V, ID=12A. Drain to Source On Resistance. RDS(ON)=7m (Max.) @ VGS=10V RDS(ON)=11m (Max.) @ VGS=4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Dr |
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KEC |
N-Channel Trench MOSFET VDSS=30V, ID=30A. Low Drain-Source ON Resistance. : RDS(ON)=18m (Max.) @ VGS=10V : RDS(ON)=36m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A C M G FF H DIM MILLIMETERS D J A 6.6 +_ 0.2 B 6.1+_ 0.2 |
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KEC |
N-Channel Trench MOSFET VDSS=40V, ID=35A. Low Drain to Source On-state Resistance. : RDS(ON)=17.5m (Max.) @ VGS=10V : RDS(ON)=27.0m (Max.) @ VGS=4.5V KMB035N40DC N-Ch Trench MOSFET A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 |
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KEC |
N-Channel Trench MOSFET VDSS=40V, ID=54A. Low Drain-Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current Handling Capability. A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 |
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Desde 2024. D4U Semiconductor.
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