KEC KF6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	KF6N60F	KEC	N-CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive
2	F60N06P	KEC	KF60N06P VDSS = 60V, ID = 60A Drain-Source ON Resistance : RDS(ON) =13.2m (Max.) @VGS = 10V Qg(typ.) = 48nC D N N A KF60N06P N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F E G B Q DIM MILLIMETERS _ 0.2 9.9 + A B C D E I K M L J H P F G H I J K L M N O 15
3	KF6N60D	KEC	N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS(Min.)= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC 1 2 3 KF6N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60D A C K D L B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0
4	KF6N70I	KEC	N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS= 700V, ID= 6A Drain-Source ON Resistance : RDS(ON)=1.65 Qg(typ) = 19nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single
5	KF60N06P	KEC	N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS = 60V, ID = 60A Drain-Source ON Resistance : RDS(ON) =13.2m (Max.) @VGS = 10V Qg(typ.) = 48nC D N N A KF60N06P N CHANNEL MOS FIELD EFFECT TRANSISTOR O C F E G B Q DIM MILLIMETERS _ 0.2 9.9 + A B C D E I K M L J H P F G H I J K L M N O 15
6	KF6N60I	KEC	N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS(Min.)= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC 1 2 3 KF6N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60D A C K D L B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0
7	KF6N60P	KEC	N-CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS(Min.)= 600V, ID= 6A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive
8	KF6N70F	KEC	N CHANNEL MOS FIELD EFFECT TRANSISTOR VDSS=700V, ID=6A Drain-Source ON Resistance : RDS(ON)(Max)=1.65 @VGS=10V Qg(typ.)= 19nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 700 30 @TC=25 Drain Current @TC=100 Pulsed (Note