KEC 2D0 Hoja de datos

No.	parte #	Fabricante	Descripción
1	KHB2D0N60P1	KEC semiconductor	(KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V K M L J D N N P Qg(typ.) = 10.9nC H 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current
2	KHB2D0N60P	KEC semiconductor	(KHB2D0N60F/P) N-Channel MOS Field Effect Transistor VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 12.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I
3	KHB2D0N60F1	KEC semiconductor	(KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V K M L J D N N P Qg(typ.) = 10.9nC H 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current
4	2D0N60P	KEC	KHB2D0N60P VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : www.DataSheet4U.com K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 +
5	KHB2D0N60F2	KEC	N-Channel MOSFET VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 10.9nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0
6	2D0N60F	KEC	KHB2D0N60F VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 10.9nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0
7	KHB2D0N60F	KEC semiconductor	(KHB2D0N60F/P) N-Channel MOS Field Effect Transistor VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 12.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I
8	KMB2D0N60SA	KEC	Trench MOSFET A H 2 G 1 3 VDSS=60V, ID=2A Drain-Source ON Resistance RDS(ON)=160m (Max.) @ VGS=10V RDS(ON)=220m (Max.) @ VGS=4.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.
9	KMA2D0DP20X	KEC	TSOP-6 PACKAGE