| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Jingdao |
Bipolar Junction Transistor Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless speci |
|
|
|
|
Jingdao Electronic |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) |
|
|
|
|
Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-826 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) |
|
|
|
|
Jingdao Electronic |
NPN Transistor High voltage capability Features of good high temperature High switching speed 3．PACKAGE SOT-82 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE |
|
|
|
|
Jingdao |
Bipolar Junction Transistor 150 100 Ta=25℃ VBEsat (V) hFE IC (A) 2.0 IB=40mA IB=20mA 0 0 5 VCE (V) 5 VBEsat-IC 10 Ta=25℃ IC/IB=2 1 10 0.1 10 VCE=5V 1 1mA 0.01 0.1 IC (A) 1 6 VCEsat-IC 1.5 Ta=25℃ IC/IB=2 10 1.0 VCEsat (V) 0.01 0.1 1 Ic (A) 10 0.5 |
|
|
|
|
Jingdao |
Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3．PACKAGE TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE |
|
|
|
|
Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD SOT-82 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) |
|
|
|
|
Jingdao |
Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3．PACKAGE TO-126D 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE |
|
Desde 2024. D4U Semiconductor.
|