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Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-251 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) |
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Jingdao |
Bipolar Junction Transistor Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-251 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specif |
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Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-251 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) |
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Desde 2024. D4U Semiconductor.
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