| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Jingdao |
Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3．PACKAGE TO-220A 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE |
|
|
|
|
Jingdao |
Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3．PACKAGE 1 2 TO-220FH 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL V |
|
Desde 2024. D4U Semiconductor.
|