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Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE TO-92 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 VD 1 Base(B) 2 Collector(C) 3 Emitter(E) Ta |
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Jingdao |
NPN Transistor 20 10 1 0.001 0.01 0.1 Ic(A) 1 1.5 Pc - Tj 25 20 15 10 5 0 40 80 120 160 200 Tj(℃) 0.05 0.01 1 10 100 Vce(V)- 1000 Ic (A ) BU103 Jingdao Electronic Corporation V01 2/3 Shenzhen Jingdao Electronic Co.,Ltd. : TO-92 ( :mm, ±0.1 |
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Jingdao |
Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-92 4.Electrical Characteristics 4.1 Absolute Maximum Ratings Tamb= 25℃ unless specified PARAMETER Collector-Base Voltage Collector-Emittor Voltage Emit |
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Jingdao |
Bipolar Junction Transistor High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-92 4.Electrical Characteristics 4.1 Absolute Maximum Ratings Tamb= 25℃ unless specified PARAMETER Collector-Base Voltage Collector-Emittor Voltage Emit |
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Jingdao |
NPN power transistor High voltage capability Features of good high temperature High switching speed 3.PACKAGE TO-92T 4.Electrical Characteristics 4.1 Absolute Maximum Ratings Tamb= 25℃ unless specified 1 Base(B) 2 Collector(C) 3 Emitter(E) PARAMETER Collector-Base Vo |
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Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE 1 VD TO-92 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Emitter(E) 2 Collector(C) 3 Base(B) |
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Jingdao |
Bipolar Junction Transistor High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE TO-92 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 VD 1 Base(B) 2 Collector(C) 3 Emitter(E) Ta |
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