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Jiangsu Changjiang |
SOT-23 Plastic Rncapsulate Transistors Power dissipation PCM: 0.2 W (Tamb=25℃) 1. 0 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter |
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Jiangsu Changjiang Electronics Technology |
NPN Transistor High Collector Current. (IC=500mA) Complementary to S9012M Excellent hFE linearity. APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, e |
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Jiangsu Changjiang Electronics Technology |
NPN Transistor 1. BASE TRANSISTOR£¨NPN £© 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150 ELECTR |
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Desde 2024. D4U Semiconductor.
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