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Jiangsu 2SD DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
2SD2061

Jiangsu Changjiang Electronics
Transistor
z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC www.DataSheet4U.com Paramenter Collector-Base Voltage Collector-Emitter Voltag
Datasheet
2
2SD2908

Jiangsu Changjiang Electronics
Transistor
. w dissipation Power 2. w 1 P : 0.5 W (Tamb=25℃) w 2 BASE COLLECTOR CM JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -
Datasheet
3
2SD965A

Jiangsu
Transistor
z Audio amplifier z Flash unit of camera z Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Contin
Datasheet
4
2SD667

Jiangsu Changjiang Electronics
NPN Transistor
z Low frequency power amplifier z Complementary pair with 2SB647/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collect
Datasheet
5
2SD667A

Jiangsu Changjiang Electronics
NPN Transistor
z Low frequency power amplifier z Complementary pair with 2SB647/A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collect
Datasheet
6
2SD2150

Jiangsu Changjiang Electronics
NPN Transistor
Power dissipation : 0.5 W Tamb=25 PCM Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Coll
Datasheet



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