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JESTEK |
P-Channel Enhancement Mode MOSFET z z z z z -30V/-4.3A,RDS(ON)< 65m@VGS=- 10V -30V/-3.4A,RDS(ON)< 90m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT23 package design P−Channel MOSFET G 1 3 D S |
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Desde 2024. D4U Semiconductor.
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