| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
JCST |
N-Channel Enhancement Mode Field Effect Transistor z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability MARKING: R0 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Sou |
|
|
|
|
JCST |
N-Channel MOSFETS Low on-resistance APPLICATIONS Li-ion battery management applications SOT-23-6L Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation (note 1, Ta=25℃) Maximum |
|
Desde 2024. D4U Semiconductor.
|