| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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JCST |
N-Channel Enhancement Mode Field Effect Transistor z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability MARKING: R0 SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Sou |
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JCST |
MOSFETS z Lead Free Product is Acquired z Surface Mount Package z N-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive APPLICATIONS z Load/Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics |
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JCST |
MOSFETS |
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JCST |
MOSFETS z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed MARKING APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching |
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JCST |
MOSFETS z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARKING: R1A SOT-23 1. GATE 2. SOURCE 3. DRAIN G D S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Volta |
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JCST |
MOSFETS |
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JCST |
MOSFETS Lead Free Product is Acquired Surface Mount Package N-Channel Switch with Low RDS(on) Operated at Low Logic Level Gate Drive Equivalent to Two CJ3134K APPLICATION Load/Power Switching Interfacing Switching Battery Management for Ultra |
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JCST |
MOSFETS z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed APPLICATION z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories z Battery Operated Systems z Power Supply Converter Circuits z Load/Power Switching Cell Phon |
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JCST |
MOSFETS z Lead Free Product is Acquired z Surface Mount Package z P-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive APPLICATION z Load/Power Switching z Interfacing, Logic Switching z Battery Management for Ultra Small Portable Elect |
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JCST |
MOSFETS z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability MARKING: R1 D 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source |
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JCST |
MOSFETS z Lead free product is acquired z Surface mount package SOT-23 1. GATE 2. SOURCE 3. DRAIN APPLICATION z Load Switch and in PWM applications MARKING: R2 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Vol |
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JCST |
MOSFETS |
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JCST |
MOSFETS |
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JCST |
P-Channel 20-V(D-S) MOSFET Excellent RDS(ON), low gate charge,low gate voltages APPLICATIONS Load switch and in PWM applicatopns MARKING: R15 D G S Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ( |
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JCST |
MOSFETS |
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JCST |
MOSFETS z Surface Mount Package z Low RDS(on) z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Including a N-ch CJ3134K and a P-ch CJ3139K (independently) In a Package APPLICATION z Load/ Power Switching z Interfacing Switching z Battery Mana |
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Desde 2024. D4U Semiconductor.
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