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Isahaya Electronics Corporation |
Silicon PNP Transistor Silicon pnp epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify application 2.0 0.65 0.65 OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit：mm 0.13 0.2 0.9 0.65 0～0.1 TERMINAL C |
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Isahaya Electronics Corporation |
Transistor ・Built-in bias resistor (R1=10kΩ,R2=10kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0～0.1 R1 B (IN) R |
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Isahaya Electronics Corporation |
Transistor ・Built-in bias resistor (R1=100kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0～0.1 R1 B (IN) C (OUT) |
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Isahaya Electronics Corporation |
SMALL-SIGNAL TRANSISTOR ●Small collector to emitter saturation voltage. VCE(sat)=-0.3V max（@Ic=-100mA,IB=-10mA） ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting 2.9 1.90 0.95 0.95 0.4 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP |
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Isahaya Electronics Corporation |
Transistor ・Built-in bias resistor (R1=10kΩ,R2=10kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 1.6 1.0 0.5 0.5 0.3 2.9 1.90 0.95 0.95 0.4 OUTLINE DRAWING UNIT：mm RT1P141U RT1P141C 1.6 0.4 0.8 0.4 2.5 0.5 1.5 0.5 |
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Isahaya Electronics Corporation |
Silicon PNP Transistor |
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Isahaya Electronics Corporation |
Silicon PNP Transistor |
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Isahaya Electronics Corporation |
Silicon PNP Transistor |
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Isahaya Electronics Corporation |
Transistor under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any prod |
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Isahaya Electronics Corporation |
Transistor ・Built-in bias resistor (R1=10kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0～0.1 R1 B (IN) C (OUT) |
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Isahaya Electronics Corporation |
Transistor der any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any produc |
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Isahaya Electronics Corporation |
Transistor ・Built-in bias resistor (R1=47kΩ,R2=22kΩ). 0.5 0.4 0.8 0.4 0.5 1.5 0.5 0.3 ① ② ③ 0.95 ① ② ③ 2.9 1.90 1.6 1.0 APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 0.7 0.15 1.1 0.55 0.8 0.16 0～0.1 R1 B (IN) R |
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Isahaya Electronics Corporation |
Transistor Built-in bias resistor R1=4.7k , R2=4.7k High collector current Ic=0.5A Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit MAXIMUM RATING (Ta=25 SYMBOL VCBO VEBO VCEO IC PC Tj Tstg ) R |
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Isahaya Electronics Corporation |
HYBRID IC •Electrical isolation between input and output with opto-coupler (Viso = 2500Vrms for 1minute) •Two supply driver topology •Built-in short circuit protection circuit(With a pin for fault out) •CMOS compatible input interface HYBRID IC VLA542-01R Hyb |
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Isahaya Electronics Corporation |
Transistor ・Built-in bias resistor (R1=10kΩ,R2=10kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 1.6 1.0 0.5 0.5 0.3 2.9 1.90 0.95 0.95 0.4 OUTLINE DRAWING UNIT：mm RT1P141U RT1P141C 1.6 0.4 0.8 0.4 2.5 0.5 1.5 0.5 |
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Isahaya Electronics Corporation |
Transistor ・Built-in bias resistor (R1=10kΩ,R2=10kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 1.6 1.0 0.5 0.5 0.3 2.9 1.90 0.95 0.95 0.4 OUTLINE DRAWING UNIT：mm RT1P141U RT1P141C 1.6 0.4 0.8 0.4 2.5 0.5 1.5 0.5 |
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Isahaya Electronics Corporation |
Transistor ・Built-in bias resistor (R1=10kΩ,R2=10kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 1.6 1.0 0.5 0.5 0.3 2.9 1.90 0.95 0.95 0.4 OUTLINE DRAWING UNIT：mm RT1P141U RT1P141C 1.6 0.4 0.8 0.4 2.5 0.5 1.5 0.5 |
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Isahaya Electronics Corporation |
Transistor ・Built-in bias resistor (R1=10kΩ,R2=10kΩ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. 1.6 1.0 0.5 0.5 0.3 2.9 1.90 0.95 0.95 0.4 OUTLINE DRAWING UNIT：mm RT1P141U RT1P141C 1.6 0.4 0.8 0.4 2.5 0.5 1.5 0.5 |
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Isahaya Electronics Corporation |
Silicon P-channel MOSFET ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=-0.6～-1.2V ・Low on Resistance. Ron=7Ω(TYP) ・High speed switching. ・Small package for easy mounting. 1.2 0.8 0.4 |
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Isahaya Electronics Corporation |
Hybrid IC 2.54 7.5MAX 30 0.5 +0.15/-0.1 7.5MAX 1 4.0MAX 3.5+/-0.7 0.25 +0.2/-0.1 9.5MAX 13.0MAX •Supply voltage · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · ·+5V, +15V •High side isolation voltage · · · · · · · · · · · · · 2500Vrms, for 1 min •The power supply for a high side |
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Desde 2024. D4U Semiconductor.
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