| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Intersil Corporation |
Radiation Hardened 8-Bit Universal Shift Register • • • • • • • • • • • • 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose R |
|
|
|
|
Intersil Corporation |
Radiation Hardened Synchronous Counter an asynchronous reset and look-ahead carry logic. Counting and parallel presetting are accomplished synchronously with the low-to-high transition of the clock. A low level on the synchronous parallel enable input, SPE, disables counting and allows da |
|
|
|
|
Intersil Corporation |
Radiation Hardened Octal Buffer/Line Driver • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si)/s • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset |
|
|
|
|
Intersil Corporation |
Radiation Hardened Octal D-Type Flip-Flop |
|
|
|
|
Intersil |
8-Bit Serial-In/Parallel-Out Shift Register • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • Dose Rate Survivability >1012 RAD (Si)/s (20ns Pulse) • Dose Rate Upset >1010 RAD (Si)/s (20ns Pulse) • Single Event Ray Upset Rate < 2 x 10-9 Errors/Bit Day (Typ) • LET Threshold >1 |
|
|
|
|
Intersil Corporation |
Radiation Hardened Octal Buffer/Line Driver/ Three-State • QML Class T, Per MIL-PRF-38535 • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • 3 Micr |
|
|
|
|
Intersil Corporation |
Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting • QML Class T, Per MIL-PRF-38535 • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • 3 Micr |
|
|
|
|
Intersil Corporation |
Radiation Hardened Triple 3-Input NOR Gate • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >10 |
|
|
|
|
Intersil Corporation |
Radiation Hardened Dual 4-Stage Binary Counter Pinouts • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rat |
|
|
|
|
Intersil Corporation |
Radiation Hardened Inverting Octal Buffer/Line Driver • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x • Dose Rate Upset >10 10 1012 RAD |
|
|
|
|
Intersil Corporation |
Radiation Hardened Octal D-Type Flip-Flop • • • • • • • • • • • • 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rat |
|
|
|
|
Intersil Corporation |
Radiation Hardened Dual-D Flip-Flop with Set and Reset • QML Class T, Per MIL-PRF-38535 • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • 3 Micr |
|
|
|
|
Intersil |
Synchronous 4-Bit Up/Down Counter Pinouts • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit- Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rat |
|
|
|
|
Intersil Corporation |
Radiation Hardened Quad 2-Input NAND Gate • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >10 |
|
|
|
|
Intersil Corporation |
Radiation Hardened Quad 2-Input NOR Gate • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD(Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 Rads (Si)/s • Dose Rate Upset >10 |
|
|
|
|
Intersil Corporation |
Radiation Hardened Hex Inverter • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 10 12 RAD (Si)/s • Dose Rate Upset |
|
|
|
|
Intersil Corporation |
Radiation Hardened Dual JK Flip Flop • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset > |
|
|
|
|
Intersil Corporation |
Radiation Hardened Dual JK Flip-Flop • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset > |
|
|
|
|
Intersil Corporation |
Radiation Hardened Dual 2-to-4 Line Decoder/Demultiplexer • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1 |
|
|
|
|
Intersil Corporation |
Radiation Hardened HEX Inverting Schmitt Trigger • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >10 |
|
Desde 2024. D4U Semiconductor.
|