No. | parte # | Fabricante | Descripción | Hoja de Datos |
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17A/ 100V/ 0.145 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 17A, 100V, RDS(on) = 0.145Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 3A, 500V, RDS(on) = 2.52Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) |
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Intersil |
12A/ 100V/ 0.195 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 12A, 100V, RDS(on) = 0.195Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
12A/ 100V/ 0.195 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 12A, 100V, RDS(on) = 0.195Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
12A/ 100V/ 0.195 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 12A, 100V, RDS(on) = 0.195Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
17A/ 100V/ 0.145 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 17A, 100V, RDS(on) = 0.145Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
17A/ 100V/ 0.145 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 17A, 100V, RDS(on) = 0.145Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
7A/ 200V/ 0.515 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 7A, 200V, RDS(on) = 0.515Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
7A/ 200V/ 0.515 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 7A, 200V, RDS(on) = 0.515Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
7A/ 200V/ 0.515 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 7A, 200V, RDS(on) = 0.515Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
5A/ 250V/ 0.715 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 5A, 250V, RDS(on) = 0.715Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
5A/ 250V/ 0.715 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 5A, 250V, RDS(on) = 0.715Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
5A/ 250V/ 0.715 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 5A, 250V, RDS(on) = 0.715Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
12A/ 200V/ 0.255 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 12A, 200V, RDS(on) = 0.255Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End-Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
12A/ 200V/ 0.255 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 12A, 200V, RDS(on) = 0.255Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End-Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
12A/ 200V/ 0.255 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 12A, 200V, RDS(on) = 0.255Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End-Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(S |
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Intersil |
9A/ 250V/ 0.415 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 9A, 250V, RDS(on) = 0.415Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
9A/ 250V/ 0.415 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 9A, 250V, RDS(on) = 0.415Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
9A/ 250V/ 0.415 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 9A, 250V, RDS(on) = 0.415Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si |
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Intersil |
3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs • 3A, 500V, RDS(on) = 2.52Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) |
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