| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Intersil Corporation |
10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs • 10A, 500V • rDS(ON) = 0.480Ω • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds • Electrostatic Discharge Protected • UIS Rating Curve • SOA is Power Dissipation Limited • High Input Impedance Description The RFV10N50BE is an N-Cha |
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Intersil Corporation |
10A/ 500V/ Fast Switching N-Channel Enhancement-Mode Power MOSFETs • 10A, 500V • rDS(ON) = 0.480Ω • Very Fast Turn-Off Characteristics • Nanosecond Switching Speeds • Electrostatic Discharge Protected • UIS Rating Curve • SOA is Power Dissipation Limited • High Input Impedance Description The RFV10N50BE is an N-Cha |
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Desde 2024. D4U Semiconductor.
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