No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Intersil Corporation |
Continuously Variable Slope Delta-Demodulator (CVSD) • All Digital • Requires Few External Parts D E D EN Continuously Variable Slope M M S O N Delta-Demodulator (CVSD) C G I E S E TR D O Description N EW N FOR The HC-55536 is a CMOS integrated circuit used to convert serial NRZ digital data to an an |
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Intersil Corporation |
Radiation Hardened 8-Bit Universal Shift Register • • • • • • • • • • • • 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose R |
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Intersil Corporation |
3 REN Ringing SLIC of the HC5517 are complex impedance matching, pulse metering and transhybrid balance. The HC5517 is designed for use in systems where a separate ring generator is not economically feasible. The device is manufactured in a high voltage Dielectric Isol |
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Intersil Corporation |
Radiation Hardened Octal Transparent Latch/ Three-State • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/BitDay (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >101 |
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Intersil Corporation |
Unbalanced PBX/Key System SLIC • Monolithic Integrated Device • Single +5V Supply • Controlled Supply of Battery Feed Current for Short Loops (30mA) • Allows Interfacing With All Ringing Systems • Switch Hook Detection • Low Power Consumption During Standby Applications • PBX Swi |
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Intersil Corporation |
QMOS 8 x 8 x 1 Crosspoint Switches with Memory Control CMOS input-voltage-level compatibility. The Master Reset has an internal pull-up resistor and is normally used with a 0.1µF capacitor. During power up all switches are automatically reset. The crosspoint switches will reset with MR = 0 even if CE is |
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Intersil Corporation |
125/220 Watt Full Bandwidth Class D Amplifier • 125 Watts RMS Power into 8Ω • 220 Watts RMS Power into 4Ω • THD <0.07% at 1kHz and 110W into 8Ω • SNR 110dB Relative to Full Power • Output Noise, 10Hz to 22kHz . . . . . . . . . . . . . . . . . 110µV • Constant Group Delay • DC to 80kHz Small Sign |
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Intersil Corporation |
Radiation Hardened Synchronous Counter an asynchronous reset and look-ahead carry logic. Counting and parallel presetting are accomplished synchronously with the low-to-high transition of the clock. A low level on the synchronous parallel enable input, SPE, disables counting and allows da |
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Intersil Corporation |
Radiation Hardened Octal Buffer/Line Driver • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si)/s • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset |
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Intersil Corporation |
Radiation Hardened Octal D-Type Flip-Flop |
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Intersil Corporation |
Continuously Variable Slope Delta-Demodulator (CVSD) • All Digital • Requires Few External Parts D E D EN Continuously Variable Slope M M S O N Delta-Demodulator (CVSD) C G I E S E TR D O Description N EW N FOR The HC-55536 is a CMOS integrated circuit used to convert serial NRZ digital data to an an |
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Intersil Corporation |
ITU Low Cost/ PABX SLIC With 40mA Loop Feed • Low Cost Version of the HC-5504B • Capable of 5V or 12V (VB+) Operation • Monolithic Integrated Device • DI High Voltage Process • Compatible With Worldwide PBX Performance Requirements • Controlled Supply of Battery Feed Current for Short Loops (4 |
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Intersil Corporation |
TR909 DLC/FLC SLIC • DI Monolithic High Voltage Process • Programmable Current Feed (20mA to 60mA) • Programmable Loop Current Detector Threshold and Battery Feed Characteristics • Ground Key and Ring Trip Detection • Compatible with Ericsson’s PBL3764 • Thermal Shutdo |
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Intersil Corporation |
Low Cost 5 REN Ringing SLIC include open circuit tip to ring DC voltages, user defined ringing waveforms, ring trip detection thresholds, and loop current limits that can be tailored for many applications. Additional features of the HC55171B are complex impedance matching, pulse |
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Intersil Corporation |
80V/2.5A Peak/ High Frequency Full Bridge FET Driver • Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations • Bootstrap Supply Max Voltage to 95VDC • Drives 1000pF Load at 1MHz in Free Air at 50oC with Rise and Fall Times of Typically 10ns • User Programmable Dead Time • On- |
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Intersil Corporation |
J1850 8-Bit 68HC05 Microcontroller 8K EEPROM Version of the HIP7030A2/A8 microcontrollers with equivalent timing, performance characteristics, and an identical footprint. The device can be programmed using the HIP7038A8 EEPROM Programmer available from Intersil. In-circuit Emulation Tools are also prov |
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Intersil Corporation |
Radiation Hardened Quad Buffer • • • • • • • • • • • 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate |
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Intersil Corporation |
Radiation Hardened Dual 4-Input NAND Gate • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >10 |
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Intersil Corporation |
Radiation Hardened Octal Buffer/Line Driver • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1 |
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Intersil Corporation |
Radiation Hardened Inverting Octal Three-State Buffer/Line Driver • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1 |
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