Intersil Corporation G20 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HGTG20N50C1D	Intersil Corporation	N-Channel IGBT • 20A, 500V • Latch Free Operation • Typical Fall Time < 500ns • High Input Impedance • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSF
2	G20N60C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i
3	HGTG20N100D2	Intersil Corporation	N-Channel IGBT • 34A, 1000V • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The
4	HGTG20N120CND	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe
5	HGTG20N120E2	Intersil Corporation	N-Channel IGBT • 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. T
6	G20N100D2	Intersil Corporation	HGTG20N100D2 • 34A, 1000V • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The
7	HGTG20N120	Intersil Corporation	N-Channel IGBT • 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. T
8	HGTG20N120C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ide
9	HGTG20N120CN	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies whe
10	HGTG20N60A4	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is
11	HGTG20N60B3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
12	HGTG20N60B3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used i
13	HGTG20N60C3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
14	HGTG20N60C3D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used i
15	DG201	Intersil Corporation	CMOS Quad SPST Analog Switch • Switches Greater than 28VP-P Signals with ±15V Supplies • Break-Before-Make Switching - tOFF . . . . . . . . .
16	DG201A	Intersil Corporation	Quad SPST / CMOS Analog Switches • Input Signal Range. . . . . . . . . . . . . . . . . . . . . . . . . . ±15V • Low rDS(ON) (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . 175Ω • TTL, CMOS Compatible • Latch-Up Proof • True Second Source • Maximum Supply Ratings. . . . . .
17	DG202	Intersil Corporation	Quad SPST / CMOS Analog Switches • Input Signal Range. . . . . . . . . . . . . . . . . . . . . . . . . . ±15V • Low rDS(ON) (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . 175Ω • TTL, CMOS Compatible • Latch-Up Proof • True Second Source • Maximum Supply Ratings. . . . . .
18	G20N60B3	Intersil Corporation	N-Channel IGBT