Intersil Corporation D2- Hoja de datos

No.	parte #	Fabricante	Descripción
1	CD22101	Intersil Corporation	CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory [ /Title (CD22 101, CD221 02) /Subject (CMO S4x4 x2 Crosspoint Switch with Control Memory) / Author () /Keywords (Harris Semiconductor, Telecom, SLICs, SLACs , Telephone, Telephony, WLL, Wireless T CMOS 4 E PRODUC OBSOLET CEMENT A L P E R D E D MEN
2	CD22203	Intersil Corporation	5V Low Power DTMF Receiver • Central Ofﬁce Quality • No Front End Band Splitting Filters Required • Single, Low Tolerance, 5V Supply • Detects Either 12 or 16 Standard DTMF Digits • Uses Inexpensive 3.579545MHz Crystal for Reference • Excellent Speech Immunity • Output in Eith
3	CD22354A	Intersil Corporation	CMOS Single-Chip/ Full-Feature PCM CODEC • Meets or Exceeds All AT&T D3/D4 Specifications and CCITT Recommendations • Complete CODEC and Filtering Systems: No External Components for Sample-and-Hold and Auto-Zero Functions. Receive Output Filter with (SIN X)/X Correction and Additional 8kHz
4	CD22357A	Intersil Corporation	CMOS Single-Chip/ Full-Feature PCM CODEC • Meets or Exceeds All AT&T D3/D4 Specifications and CCITT Recommendations • Complete CODEC and Filtering Systems: No External Components for Sample-and-Hold and Auto-Zero Functions. Receive Output Filter with (SIN X)/X Correction and Additional 8kHz
5	CD22859	Intersil Corporation	Monolithic Silicon COS/MOS Dual-Tone Multifrequency Tone Generator • Mute Drivers On-Chip • Device Power can Either be Regulated DC or Telephone Loop Current • Use of an Inexpensive 3.579545MHz TV Crystal Provides High Accuracy and Stability for all Frequencies Applications • For Use In Dual-tone Telephone Dialing
6	HGTG20N100D2	Intersil Corporation	N-Channel IGBT • 34A, 1000V • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The
7	CD22100	Intersil Corporation	CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) • Low ON Resistance . . . . . . . . . .75Ω (Typ) at VDD = 12V • “Built-In” Control Latches • Large Analog Signal Capability . . . . . . . . . . . . . . . ±VDD/2 • 10MHz Switch Bandwidth • Matched Switch Characteristics ∆RON = 18Ω (Typ) at VDD = 12V •
8	CD22103A	Intersil Corporation	CMOS HDB3 High Density Bipolar 3 Transcoder for 2.048/8.448Mb/s Transmission Applications • HDB3 Coding and Decoding for Data Rates from 50Kb/s to 10Mb/s in a Manner Consistent with CCITT G703 Recommendations • HDB3/AMI Transmission Coding/Reception Decoding with Code Error Detection is Performed in Independent Coder and Decoder Sections
9	CD22202	Intersil Corporation	5V Low Power DTMF Receiver • Central Office Quality • No Front End Band Splitting Filters Required • Single, Low Tolerance, 5V Supply • Detects Either 12 or 16 Standard DTMF Digits • Uses Inexpensive 3.579545MHz Crystal for Reference • Excellent Speech Immunity • Output in Eit
10	CD22204	Intersil Corporation	5V Low Power Subscriber DTMF Receiver • No Front End Band Splitting Filters Required • Single Low Tolerance 5V Supply • Three-State Outputs for Microprocessor Based Systems • Detects all 16 Standard DTMF Digits • Uses Inexpensive 3.579545MHz Crystal • Excellent Speech Immunity • Output i
11	CD22402	Intersil Corporation	Sync Generator for TV Applications and Video Processing Systems • Interlaced Composite Sync Output • Automatic Genlock Capability • Crystal Oscillator Operation • 525 or 625 Line Operation • Vertical Reset Option • Wide Power Supply Operating Voltage . . . . . 4V to 15V Description The Harris CD22402 (Note) is a
12	CD22M3493	Intersil Corporation	12 x 8 x 1 BiMOS-E Crosspoint Switch • 96 Analog Switches • Low RON • Guaranteed RON Matching • Analog Signal Input Voltage Equal to the Supply Voltage • Wide Operating Voltage . . . . . . . . . . . . . . . . . . . 4V to 16V • Parallel Input Addressing • High Latch Up Current . . . . .
13	RFD20N03SM	Intersil Corporation	20A/ 30V/ 0.025 Ohm/ N-Channel Power MOSFETs • 20A, 30V • rDS(ON) = 0.025Ω • Temperature Compensating PSPICE® Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface
14	G20N100D2	Intersil Corporation	HGTG20N100D2 • 34A, 1000V • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The
15	HGTD2N120BNS	Intersil Corporation	12A/ 1200V/ NPT Series N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh
16	HGTD2N120CNS	Intersil Corporation	13A/ 1200V/ NPT Series N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies wh
17	HGTG30N120D2	Intersil Corporation	N-Channel IGBT • 30A, 1200V • Latch Free Operation • Typical Fall Time - 580ns • High Input Impedance • Low Conduction Loss Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. Th
18	CD22102	Intersil Corporation	CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory [ /Title (CD22 101, CD221 02) /Subject (CMO S4x4 x2 Crosspoint Switch with Control Memory) / Author () /Keywords (Harris Semiconductor, Telecom, SLICs, SLACs , Telephone, Telephony, WLL, Wireless T CMOS 4 E PRODUC OBSOLET CEMENT A L P E R D E D MEN
19	CD22301	Intersil Corporation	Monolithic PCM Repeater • Automatic Line Buildout • Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1V • Buffered Output Applications • Bipolar Carrier System . . . . . . . . . . . . .T1 1.544Mbits/s • Ternary Carrier System . . . . . . . . . . .
20	IRFD210	Intersil Corporation	N-Channel Power MOSFET • 0.6A, 200V • rDS(ON) = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Sur